Semiconductor circuit device with reduced power consumption in s

Details Semiconductor circuit device with reduced power consumption in s Semiconductor circuit device with reduced power consumption in s

1998-07-07

2000-05-02

Phan, Trong

Static information storage and retrieval

Read/write circuit

Data refresh

365226, G11C 700

Patent

active

060580615

ABSTRACT:
In a DRAM employing a shared sense amplifier method, a bit line select signal falls to the level of ground potential after a potential difference is generated between a pair of bit lines and sense nodes in response to activation of a word line in a self refresh mode for disconnecting the bit line pair in a memory block including the activated word line from a sense amplifier. When the potentials of the sense nodes are amplified by the sense amplifier, the disconnected bit line pair is connected again to the sense amplifier.

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"Battery Operated 16M DRAM with Post Package Programmable and Variable Self Refresh", Choi et al., 1994, Symposium on VLSI Circuits Digest of Technical Papers, pp. 83-84.

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