Semiconductor circuit arrangement with trench isolation and...

Details Semiconductor circuit arrangement with trench isolation and... Semiconductor circuit arrangement with trench isolation and...

2006-10-31

2006-10-31

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S321000

Reexamination Certificate

active

07129540

ABSTRACT:
An explanation is given of, inter alia, a circuit arrangement containing a trench which penetrates through a charge-storing layer (18) and a doped semiconductor layer (14). The trench simultaneously fulfils a multiplicity of functions, namely an insulating function between adjacent components, the patterning of the charge-storing layer and also the subdivision of doping layers of the semiconductor layer (14).

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patent: 10229066 (2004-01-01), None
patent: 2003002709 (2003-01-01), None

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