Semiconductor circuit

Details Semiconductor circuit Semiconductor circuit

1998-02-25

2000-08-29

Le, Dinh T.

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327530, 327437, 327537, 331 57, G01K 700, G05F 110

Patent

active

061114561

ABSTRACT:
A semiconductor circuit comprises an I-type of NMOS transistors N15 and N16 connected between a power supply voltage VDD and a ground electrode. The gate electrode of the NMOS transistor N15 is set to a reference voltage VREF that is lower than the power supply voltage VDD. The drain voltage VD of the NMOS transistor N16 is almost equal to the reference voltage VREF, and the NMOS transistor N16 acts in a linear region. Accordingly, the NMOS transistor N16 acts in the same manner as the resistor element and has no influence on change of the concentration of the diffusion resistor or the power supply voltage VDD.

REFERENCES:
patent: 5008609 (1991-04-01), Fukiage
patent: 5388084 (1995-02-01), Itoh et al.
patent: 5499209 (1996-03-01), Oowaki et al.
patent: 5544120 (1996-08-01), Kuwagata et al.
patent: 5668487 (1997-09-01), Chonan
patent: 5717935 (1998-02-01), Zanders et al.

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