Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2011-08-23
2011-08-23
Chu, Chris C (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257SE23020, C257S737000, C257S784000, C257S786000, C438S106000, C438S612000
Reexamination Certificate
active
08004092
ABSTRACT:
The invention provides a semiconductor chip comprising an interconnecting structure over said passivation layer. The interconnecting structure comprises a first contact pad connected to a second contact pad exposed by an opening in a passivation layer. A metal bump is on the first contact pad and over multiple semiconductor devices, wherein the metal bump has more than 50 percent by weight of gold and has a height of between 8 and 50 microns.
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Chou Chien-Kang
Chou Chiu-Ming
Lin Ching-San
Lin Mou-Shiung
Lo Hsin-Jung
Chu Chris C
McDermott Will & Emery LLP
Megica Corporation
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