Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2005-06-14
2005-06-14
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S297000, C257S300000, C257S310000, C257S316000
Reexamination Certificate
active
06906398
ABSTRACT:
Both high performance and low leakage current devices can be formed on a single wafer without significant additional processing steps by the formation of an ultra-thin gate dielectric and a high-permittivity gate dielectric, respectively, in regions wherein switching speed and low leakage current, respectively, are desired. Logic and embedded memory regions can be performance optimized on the same integrated circuit.
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Hu Chenming
Yang Fu-Liang
Yeo Yee-Chia
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Wojciechowicz Edward
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