Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-05-17
2008-12-30
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S277000
Reexamination Certificate
active
07470927
ABSTRACT:
A method for fabricating a circuitry component includes providing a semiconductor substrate, a first coil over said semiconductor substrate, a passivation layer over said first coil; and depositing a second coil over said passivation layer and over said first coil. Said second coil may be deposited by forming a first metal layer over said passivation layer, forming a pattern defining layer over said first metal layer, a first opening in said pattern defining layer exposing said first metal layer, forming a second metal layer over said first metal layer exposed by said first opening, removing said pattern defining layer, and removing said first metal layer not under said second metal layer.
REFERENCES:
patent: 2005/0104158 (2005-05-01), Bhattacharjee et al.
Chou Chien-Kang
Chou Chiu-Ming
Lee Jin-Yuan
Lee Wen-Chieh
Lin Mou-Shiung
Megica Corporation
Nguyen Ha Tran T
Tillie Chakila
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