Semiconductor chip with borderless contact that avoids well...

Details Semiconductor chip with borderless contact that avoids well... Semiconductor chip with borderless contact that avoids well...

2006-08-29

2006-08-29

Smoot, Stephen W. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S513000, C257S637000, C257S774000

Reexamination Certificate

active

07098515

ABSTRACT:
An inventive semiconductor chip is provided. Generally, shallow trenches containing field oxide are provided on a substrate. At least one semiconductor device is formed between the shallow trenches. An oxide layer is formed over the at least one semiconductor device and the field oxide. An etch stop layer is formed over the oxide layer. An inter layer dielectric layer is formed over the etch stop layer. At least one contact hole is etched through the inter layer dielectric layer, the etch stop layer and at least partially through the oxide layer. The contact hole is filled with a conductive material.

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Stanley Wolf and Richard N. Tauber, “Silicon Processing for the VLSI Era—vol. 1: Process Technology,” Lattice Press, Sunset Beach, California (1986) p. 523.

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