Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-02-15
2005-02-15
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S784000, C257S622000, C257S680000, C438S108000
Reexamination Certificate
active
06856026
ABSTRACT:
A semiconductor chip which does not increase the thickness or the board area of a semiconductor device wherein semiconductor chips are layered and does not increase the wire length between the semiconductor chips even in the case that a plurality of semiconductor chips are layered on a wiring board and a process thereof, as well as a semiconductor device, and the like, are provided.The semiconductor chip has a semiconductor substrate13, first external electrodes21formed on the first surface14of the semiconductor substrate13, second external electrodes22formed on the second surface17of the semiconductor substrate13and through holes16created in the semiconductor substrate13, wherein the through holes16are provided in the inclined planes15formed so that the inner angles made up of the second surface17and the inclined planes15are obtuse angles and the first external electrodes21and the second external electrodes22are electrically connected through conductive patterns19formed so as to follow the inner walls of the through holes16and the inclined planes15.
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Japanese Office Action dated Feb. 3, 2003 with English translation.
Hamatani Tsuyoshi
Yamada Yuichiro
Clark Jasmine
Matsushita Electric - Industrial Co., Ltd.
Stevens Davis Miller & Mosher LLP
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