Semiconductor chip production method, semiconductor device...

Details Semiconductor chip production method, semiconductor device... Semiconductor chip production method, semiconductor device...

2007-08-07

2007-08-07

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S778000

Reexamination Certificate

active

11518889

ABSTRACT:
A semiconductor chip production method including the steps of: forming a front side recess in a semiconductor substrate; depositing a metal material in the front side recess to form a front side electrode electrically connected to a functional device formed on the front surface; removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a thickness greater than the depth of the front side recess; forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step; and depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode.

REFERENCES:
patent: 5229647 (1993-07-01), Gnadinger
patent: 5627106 (1997-05-01), Hsu
patent: 5962923 (1999-10-01), Xu et al.
patent: 6841883 (2005-01-01), Farnworth et al.
patent: 7067353 (2006-06-01), Koizumi et al.
patent: 7122457 (2006-10-01), Tanida et al.
patent: WO 98/19337 (1998-05-01), None

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