Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-26
2005-07-26
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S598000, C438S599000, C438S612000, C438S613000, C438S614000, C438S615000, C438S617000, C438S618000, C438S687000
Reexamination Certificate
active
06921713
ABSTRACT:
An active microelectronic element such as a semiconductor chip or wafer is bonded to an interconnect element having substantially the same coefficient of thermal expansion as the active element using small, rigid bonds, desirably made by a solid-phase bonding technique, which accommodate numerous closely-spaced interconnections. The assembly is provided with terminals movable with respect to the active element and interconnect element. The interconnect element desirably provides low-impedance conductive paths interconnecting active electronic devices within the active element.
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Haba Belgacem
Smith John W.
Gurley Lynne A.
Lerner David Littenberg Krumholz & Mentlik LLP
Tessera Inc.
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