Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2006-10-31
2006-10-31
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S728000, C257S691000, C257S698000, C257S707000, C257S710000, C257S700000, C257SE23001, C257SE23051, C257SE23069, C257SE23114, C257SE23144, C257S737000, C257S924000, C361S763000
Reexamination Certificate
active
07129571
ABSTRACT:
A semiconductor chip package has a substrate that includes circuit lines provided on first and/or second surfaces, a power plane provided on the second surface, bump lands provided on the second surface and coupled to the circuit lines, and ball lands provided on the first surface. The package further has a semiconductor chip attached to the second surface of the substrate and electrically coupled to the circuit lines, and a dielectric layer provided on the second surface of the substrate. The dielectric layer surrounds laterally the chip, covers the power plane, and exposes the bump lands. The package further has a ground plane provided on both the chip and the dielectric layer, vertical connection bumps provided within the dielectric layer and on the bump lands and electrically coupled to the ground plane, and solder balls provided on the ball lands.
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English language abstract of the Japanese Publication No. 05-166876.
English language abstract of the Japanese Publication No. 05-291347.
Marger & Johnson & McCollom, P.C.
Rodela Eduardo A.
Samsung Electronics Co,. Ltd.
Tran Minhloan
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