Semiconductor chip including a substrate and multilayer part

Details Semiconductor chip including a substrate and multilayer part Semiconductor chip including a substrate and multilayer part

2011-03-08

2011-03-08

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Including region containing crystal damage

C257S618000, C257S620000, C257SE21559, C438S460000, C438S463000, C438S464000

Reexamination Certificate

active

07902636

ABSTRACT:
A semiconductor device is provided, which, when cutting a substrate formed with a multilayer part including a plurality of functional devices, makes it possible to cut the multilayer part with a high precision in particular. In a state where a protective tape22is attached to the front face16aof a multilayer part16, a substrate4is irradiated with laser light L while using its rear face4bas a laser light entrance surface, so as to form a modified region7within the substrate4along a line to cut, thereby generating a fracture24reaching the front face4aof the substrate4from a front-side end part7aof the modified region7. Attaching an expandable tape to the rear face4bof the substrate4and expanding it in the state where such a fracture24is generated can cut not only the substrate4but also the multilayer part16on the line to cut, i.e., interlayer insulating films17a,17b, with a favorable precision along the line to cut.

REFERENCES:
patent: 6992026 (2006-01-01), Fukuyo et al.
patent: 7592238 (2009-09-01), Fukuyo et al.
patent: 2004/0002199 (2004-01-01), Fukuyo et al.
patent: 2005/0202596 (2005-09-01), Fukuyo et al.
patent: 2006/0011593 (2006-01-01), Fukuyo et al.
patent: 2007/0170159 (2007-07-01), Fukumitsu
patent: 1 610 364 (2005-12-01), None
patent: 1 670 046 (2006-06-01), None
patent: 2002192367 (2002-07-01), None
patent: 2003-154517 (2003-05-01), None
patent: 2003-334812 (2003-11-01), None
patent: 2003-338467 (2003-11-01), None
patent: 2004-1076 (2004-01-01), None
patent: 2005-57257 (2005-03-01), None
patent: WO 03/076118 (2003-09-01), None
patent: WO 03/076119 (2003-09-01), None
patent: WO 03/076120 (2003-09-01), None
patent: WO 2004/082006 (2004-09-01), None
patent: WO 2005/027212 (2005-03-01), None
K. Hayashi; “Inner Glass Marking by Harmonics of Solid-State Laser”, Proceedings of 45thLaser Materials Processing Conference, Dec. 1998, pp. 23-28.
K. Miura et al., “Formation of Photo-Induced Structures in Glasses with Femtosecond Laser”, Proceedings of 42ndLaser Materials Processing Conference, Nov. 1997, pp. 105-111.
T. Sano et al., “Evaluation of Processing Characteristics of Silicon with Picosecond Pulse Laser”, Preprints of the National Meeting of Japan Welding Society, No. 66, Apr. 2000, pp. 72-73 (with at least partial English translation).

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