Semiconductor chip capable of implementing wire bonding over...

Details Semiconductor chip capable of implementing wire bonding over... Semiconductor chip capable of implementing wire bonding over...

2007-12-04

2007-12-04

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S759000, C257SE23046, C257SE23052

Reexamination Certificate

active

11422330

ABSTRACT:
A reinforced bonding pad structure includes a bondable metal layer defined on a stress-buffering dielectric layer, and an intermediate metal layer damascened in a first inter-metal dielectric (IMD) layer disposed under the stress-buffering dielectric layer. The intermediate metal layer is situated directly under the bondable metal layer and is electrically connected to the bondable metal layer with a plurality of via plugs integrated with the bondable metal layer. A metal frame is damascened in a second IMD layer under the first IMD layer. The metal frame is situated directly under the intermediate metal layer for counteracting mechanical stress exerted on the bondable metal layer during bonding, when the thickness of said stress-buffering dielectric layer is greater than 2000 angstroms, the damascened metal frame may be omitted. An active circuit portion including active circuit components of the integrated circuit is situated directly under the metal frame.

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