Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-04-26
2011-04-26
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S623000, C438S636000, C438S656000, C438S687000, C257SE21585, C257SE21586, C257SE23145, C257SE27096
Reexamination Certificate
active
07932172
ABSTRACT:
A semiconductor chip comprises a first MOS device, a second MOS device, a first metallization structure connected to said first MOS device, a second metallization structure connected to said second MOS device, a passivation layer over said first and second MOS devices and over said first and second metallization structures, and a third metallization structure connecting said first and second metallization structures.
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Chou Chien-Kang
Lin Mou-Shiung
Lo Hsin-Jung
Lebentritt Michael S
McDermott Will & Emery LLP
Megica Corporation
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