Semiconductor cell memory with current sensing

Details Semiconductor cell memory with current sensing Semiconductor cell memory with current sensing

1992-01-30

1992-11-10

Bowler, Alyssa H.

Static information storage and retrieval

Read/write circuit

For complementary information

3652256, 365206, 365242, G11C 700, G11C 11416

Patent

active

051630222

ABSTRACT:
The disclosure includes feeding a current I.sub.R to only BIT lines selected, or feeding current I.sub.R transiently to only the BIT lines switched from unselected to selected states; and a sense amplifier for detecting the difference between the currents flowing in selected BIT lines to read out stored information, wherein current I.sub.R and cell current I.sub.cell have a relation of I.sub.R >I.sub.cell. The BiC MOS memory has high speed, low power and high integration density. Diodes are provided between the memory cell and the BIT lines.

REFERENCES:
patent: 4570238 (1986-02-01), Birrittella
patent: 4825413 (1989-04-01), Tran
patent: 4858183 (1989-08-01), Scharrer
patent: 4864540 (1989-09-01), Hashemi et al.
patent: 4933899 (1990-06-01), Gibbs
patent: 4961168 (1990-10-01), Tran

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