Semiconductor carrier film, and semiconductor device and...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S767000, C257S784000

Reexamination Certificate

active

10878541

ABSTRACT:
A semiconductor carrier film includes (i) a base film having insulating property, (ii) a barrier layer provided on the base film, the barrier layer including nickel-chrome alloy as a main component, and (iii) a wire layer provided on the barrier layer, the wire layer being made of conductive material including copper, and a ratio of chrome in the barrier layer is 15% to 50% by weight. A semiconductor device is formed by bonding a semiconductor element to the wire layer. The semiconductor carrier film and the semiconductor device are suitable for attaining finer pitches and higher outputs, because insulating resistance between adjacent terminals is less likely to deteriorate then in conventional art even in the environment of high temperature and moisture.

REFERENCES:
patent: 4226899 (1980-10-01), Thiel et al.
patent: 6492198 (2002-12-01), Hwang
patent: 2002-252257 (2002-09-01), None

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