Semiconductor capacitor with diffusion prevention layer

Details Semiconductor capacitor with diffusion prevention layer Semiconductor capacitor with diffusion prevention layer

2005-08-23

2005-08-23

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S239000, C438S381000, C438S650000, C257S295000, C257S310000

Reexamination Certificate

active

06933156

ABSTRACT:
A capacitor which has a lower electrode having a structure in which the first conductive layer containing a first metal, a second conductive layer that is formed on the first conductive layer and made of the metal oxide of the second metal different from the first metal, and a third conductive layer that is formed on the second conductive layer and made of a third metal different from the first metal. These layers are formed sequentially. A dielectric layer is formed on the lower electrode, and an upper electrode is formed on the capacitor dielectric layer.

REFERENCES:
patent: 5576928 (1996-11-01), Summerfelt et al.
patent: 5998236 (1999-12-01), Roeder et al.
patent: 6211005 (2001-04-01), Kang
patent: 6313539 (2001-11-01), Yokoyama et al.
patent: 6350643 (2002-02-01), Hintermaier et al.
patent: 6376325 (2002-04-01), Koo
patent: 0 785 579 (1997-07-01), None
patent: 9-22829 (1997-01-01), None

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