Ion beam lithography system

Details Ion beam lithography system Ion beam lithography system

2005-08-02

2005-08-02

Berman, Jack (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492230

Reexamination Certificate

active

06924493

ABSTRACT:
A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

REFERENCES:
patent: 4418283 (1983-11-01), Trotel
patent: 6486480 (2002-11-01), Leung et al.

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