Semiconductor capacitor and MOSFET fitted therewith

Details Semiconductor capacitor and MOSFET fitted therewith Semiconductor capacitor and MOSFET fitted therewith

2006-06-13

2006-06-13

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Forming schottky junction

Using refractory group metal

Reexamination Certificate

active

07060600

ABSTRACT:
In accordance with the invention the semiconductor capacitor includes a first capacitor electrode1, a second capacitor electrode3and a capacitor dielectric5which is arranged between the two capacitor electrodes and which includes praseodymium oxide. It is distinguished in that the second capacitor electrode3includes praseodymium silicide.

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patent: WO 02/097895 (2002-12-01), None
Surface Science 504 (2002) 159-166, XP-001189099, Initial stages of praseodymium oxide film formation on Si(001), H.-J. Müssig et al., IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany; received Sep. 8, 2001, accepted for publication Dec. 3, 2001.
2001 IRW Final Report, 0-7803-7167-Apr. 1, 2001 IEEE, Can Praseodymium Oxide be an Alternative High-K Gate Dielectric Material for Silicon Integrated Circuits?, H. -J Müssig et al., IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany.

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