Semiconductor cap

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material

Patent

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Details

257697, 257710, 437221, 72359, 723792, H01L 2312, H01L 2348

Patent

active

057898103

ABSTRACT:
A method for manufacturing a cap for use in a semiconductor package is disclosed. The semiconductor package includes a semiconductor chip and a substrate. The chip is mounted with the substrate at a chip locus. The method preferably comprises the steps of placing a slug in a die, and exercising the die to cold flow the slug to a predetermined cap configuration. The cap configuration includes a plurality of walls depending from a polygonal generally planar base and cooperating with the base to establish a well bounded by the walls and the base. The walls terminate in a plane, and the well clears the chip when the cap is mounted on the substrate at the chip locus. The invention further includes a cap for use in a semiconductor package. The cap comprises a structure cold flowed from a slug in a die to a predetermined cap configuration. The cap configuration includes a plurality of walls depending from a polygonal generally planar base and cooperates with the polygonal base to establish a well bounded by the plurality of walls and the polygonal base. The walls terminate generally in a termination plane, and the well clears the chip when the cap is abuttingly mounted at the termination plane on the substrate at the chip locus.

REFERENCES:
patent: 3962899 (1976-06-01), Hubbell
patent: 4113522 (1978-09-01), Hamilton et al.
patent: 4145903 (1979-03-01), Leach et al.
patent: 4177665 (1979-12-01), Schurmann
patent: 5023398 (1991-06-01), Mahulikar et al.
patent: 5233225 (1993-08-01), Ishida et al.
patent: 5397917 (1995-03-01), Ommen et al.
patent: 5455457 (1995-10-01), Kurokawa
Taylor Lyman, Metals Handbook, Apr. 1960, pp. 33-45.

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