Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2011-07-19
2011-07-19
Duda, Kathleen (Department: 1722)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S316000
Reexamination Certificate
active
07981591
ABSTRACT:
Methods for forming grating profiles in semiconductor laser structures comprise the steps of providing a semiconductor wafer comprising a wafer substrate, an etch stop layer disposed over the wafer substrate, a grating layer disposed over the etch stop layer, an etch mask layer disposed over the grating layer, and a photoresist layer disposed over the etch mask layer, forming a photoresist grating pattern, transferring the photoresist grating pattern into the grating layers via dry etching, and removing the photoresist layer, selectively wet etching the grating layer to form the grating profile in the grating layer. The placement of the grating layer between the etch mask and etch stop layers controls the selective wet etching step. The method also comprises removing the etch mask layer via selective wet etching without altering the grating profile, and regrowing an upper cladding layer to produce the semiconductor laser structure.
REFERENCES:
patent: 5567659 (1996-10-01), Pakulski et al.
patent: 5982804 (1999-11-01), Chen et al.
patent: 6304587 (2001-10-01), Zah
patent: 6551936 (2003-04-01), Pakulski et al.
patent: 6878959 (2005-04-01), Bour et al.
patent: 2002/0139775 (2002-10-01), Chang et al.
patent: 2005/0117169 (2005-06-01), Weitzel
patent: 2005/0189315 (2005-09-01), Knight et al.
patent: 2005/0277063 (2005-12-01), Wang et al.
patent: WO2005/043701 (2005-05-01), None
George R. Harrison, “The Production of Diffraction Gratings I. Development of the Ruling Art” J. Opt. Soc. Am., 39(6):413-426 (1949).
K.C. Song, Y. Li, N. Visovsky, M. Hu, H. K. Nguyen, X.S. Liu, S. Coleman, B. Paddock, M. Turner, C. Catherine, R. Bhat C.E. Zah, “High Power 1060 NM DBR Lasers With Quantum Well Intermixed Passive Sections”, submitted to IEEE LEOS 18th Annual Meeting (2005).
Hyeon Soo Kim, Fun-Hwa Lee, et al Reliable and Damage-Free Dry Grating Etch for the Ingaasp DFB Laser Diodes, ThP23, Indium Phosphide and Related Materials, 2003. International Conference.
Otte Jakob Homam, “A GAAS/ALGAAS DBR Laser Diode With Side-Coupled Bragg Gratings”, Dissertation of Doctor of Technical Science, 1996.
Skogen, E.J.; “Quantum well intermixing for wavelength-agile photonic integrated circuits”; PhD Dissertation—Electrical and Computer Engineering Department, University of California Santa Barbara, Jun. 2003.
Song, K. et al.; “High power 1060 nm DBR lasers with quantum well intermixed passive sections”; Lasers and Electro-Optics Society, 2005.
Zah, C. et al.; “High power 1060-nm raised-ridge strained single-quantum-well lasers”; Semiconductor Laser Conference, 2004.
Wiedmann, J. et al.; “GalnAsP/InP distributed reflector lasers consisting of deeply etched vertical gratings”; Japanese Journal of Applied Physics Part 1, vol. 40, No. 12, p. 6845-6851, 2001.
Li Yabo
Song Kechang
Visovsky Nicholas John
Zah Chung-en
Adusei-Poku Kwadjo
Corning Incorporated
Duda Kathleen
Sullivan Caleen O
LandOfFree
Semiconductor buried grating fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor buried grating fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor buried grating fabrication method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2713712