Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-05-09
2000-10-17
Picardat, Kevin M.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438614, 1022023, 1022024, H07L 2144
Patent
active
061331465
ABSTRACT:
A device, e.g., an explosive-initiation device (24) includes a semiconductor bridge device (10) comprising semiconductor pads (14a, 14b) separated by an initiator bridge (14c) and having metallized lands (16a, 16b) disposed over the pads (14a, 14b). The metallized lands (16a, 16b) each comprise a titanium base layer (18), a titanium-tungsten intermediate layer (20) and a tungsten top layer (22). This multilayer construction is simple to apply, provides good adhesion to the semiconductor (14) and enhanced semiconductor bridge characteristics, and avoids the electromigration problems attendant upon use of aluminum metallized lands under severe conditions of no-fire tests and very low firing voltage or current levels. The semiconductor (14) may optionally be covered by a cap or cover (117) of a stratified metal layer similar or identical to the metallized lands (16a, 16b). A method of making the semiconductor bridge devices includes metal sputtering of titanium, then titanium plus tungsten and then tungsten onto an appropriately masked semiconductor surface to attain the multilayer metallized lands (16a, 16b) and/or cover (117) of the invention.
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Martinez-Tovar Bernardo
Montoya John A.
Picardat Kevin M.
SCB Technologies Inc.
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