Semiconductor body with metallizing on the back side

Details Semiconductor body with metallizing on the back side Semiconductor body with metallizing on the back side

1999-04-08

2000-11-14

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257750, 257758, 257764, 257765, 257766, 257771, 257776, H01L 2348, H01L 2352, H01L 2940

Patent

active

061474037

ABSTRACT:
To markedly reduce wafer warping of semiconductor wafers without weakening the strength of adhesion to substrate materials, a novel back side metallizing system is presented. On a silicon semiconductor body an aluminum layer and a diffusion barrier layer that includes titanium are provided. A titanium nitride layer is incorporated into the titanium layer because it has been demonstrated that the titanium nitride layer can compensate for a large proportion of the wafer warping that occurs. Preferably, the usual tempering for improving the ohmic contact between the aluminum layer and the silicon semiconductor body is not performed after the complete metallizing of the semiconductor body, but rather after a first, thin aluminum layer has been deposited onto the silicon semiconductor body.

REFERENCES:
patent: 4408216 (1983-10-01), Gould
patent: 4753851 (1988-06-01), Roberts et al.
patent: 4875088 (1989-10-01), Egawa et al.
patent: 5182420 (1993-01-01), Steitz et al.
patent: 5249728 (1993-10-01), Lam
patent: 5635763 (1997-06-01), Inoue et al.
patent: 5976969 (1999-11-01), Lin et al.
"High Reliability Microwave Silicon Power Transistor With Stepped Electrode Structure and TiN Diffusion Barrier" (Kanamori et al.), IEEE Transactions on Electron Devices, vol. ED-33, No. 3, Mar. 1986, pp. 402-408.

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