Semiconductor bipolar memory device operating in high speed

Details Semiconductor bipolar memory device operating in high speed Semiconductor bipolar memory device operating in high speed

1984-10-15

1987-02-24

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Semiconductive

365189, 365175, G11C 700

Patent

active

046462686

ABSTRACT:
A semiconductor memory device composed of bipolar transistors is disclosed. A read/write control circuit includes a voltage producing section which produces a reading-out voltage used for reading out the data stored in the selected memory cell. The voltage producing section includes a first transistor of an emitter follower type as its output stage, and the data-read operation is thus attained in a high speed. The voltage producing section further includes a diode whose ON voltage is substantially equal to that of a clamping diode provided in a memory cell and a second transistor having an emitter resistor and a collector resistor and supplying the collector resistor with a current determined by the ON voltage of the diode and the emitter resistor. The potential at the collector of the second transistor is applied to the first transistor.

REFERENCES:
patent: 4479200 (1984-10-01), Sato et al.

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