Semiconductor bidirectional switching device

Details Semiconductor bidirectional switching device Semiconductor bidirectional switching device

2005-09-13

2005-09-13

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S331000

Reexamination Certificate

active

06943408

ABSTRACT:
A semiconductor switching device (10) is formed on a semiconductor substrate (12) having a trench (44) formed on one of its surfaces (42). A control electrode (32) activates a wall of the trench to form a conduction channel (36). A first conduction electrode (40) is disposed on the semiconductor substrate to have a first doped region (34) for receiving a current and a second doped region (24) for routing the current to the conduction channel.

REFERENCES:
patent: 5877527 (1999-03-01), Okabe et al.
patent: 6084264 (2000-07-01), Darwish
patent: 6624469 (2003-09-01), Harada

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