Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2007-02-20
2007-02-20
Gupta, Yogendra (Department: 1722)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S029000, C438S042000, C117S086000, C257S098000, C257S103000
Reexamination Certificate
active
10380933
ABSTRACT:
As shown in FIG.1(a), substrate1having a growth plane having a concavo-convex surface is used. When GaN group crystal is vapor phase grown using this substrate, the concavo-convex shape suppresses growth in the lateral direction and promotes growth in the C axis direction, thereby affording a base surface capable of forming a facet plane. Thus, as shown in FIG.1(b), a crystal having a facet plane is grown in a convex part, and a crystal is also grown in a concave part. When the crystal growth is continued, the films grown from the convex part and the concave part are joined in time to cover a concavo-convex surface and become flat as shown in FIG.1(c). In this case, an area having a low a dislocation density is formed in the upper part of the convex part where facet plane was formed, and the prepared film has high quality.
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Okagawa Hiroaki
Ouchi Yoichiro
Tadatomo Kazuyuki
Tsunekawa Takashi
Gupta Yogendra
Leydig , Voit & Mayer, Ltd.
Mitsubishi Cable Industries Ltd.
Rao G. Nagesh
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