Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Reexamination Certificate
2005-09-06
2005-09-06
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
C257S098000, C257S086000, C257S088000, C257S089000, C257S190000, C257S191000, C257S192000
Reexamination Certificate
active
06940098
ABSTRACT:
A growth plane of substrate1is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part12, and therefore, a crystal growth occurs only from an upper part of a convex part11. As shown in FIG.1(b), therefore, a crystal unit20occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part11as a starting point are connected to cover the concavo-convex surface of the substrate1, leaving a cavity13in the concave part, as shown in FIG.1(c), thereby giving a crystal layer2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part12has a low dislocation region and the crystal layer prepared has high quality. The manufacturing method of the semiconductor crystal of the present invention divides this semiconductor base into the substrate1and the crystal layer2at the cavity part thereof to give a semiconductor crystal.
REFERENCES:
patent: 5279701 (1994-01-01), Shigeta et al.
patent: 5614019 (1997-03-01), Vichr et al.
patent: 5673092 (1997-09-01), Horie et al.
patent: 5676752 (1997-10-01), Bozler et al.
patent: 5727015 (1998-03-01), Takahashi et al.
patent: 6091085 (2000-07-01), Lester
patent: 6156581 (2000-12-01), Vaudo et al.
patent: 6252261 (2001-06-01), Usui et al.
patent: 6258617 (2001-07-01), Nitta et al.
patent: 6274518 (2001-08-01), Yuri et al.
patent: 6303405 (2001-10-01), Yoshida et al.
patent: 6335546 (2002-01-01), Tsuda et al.
patent: 6426519 (2002-07-01), Asai et al.
patent: 6617182 (2003-09-01), Ishida et al.
patent: 2004/0048471 (2004-03-01), Okagawa et al.
patent: 0 874 405 (1998-10-01), None
patent: 4-236478 (1992-08-01), None
patent: 9-326534 (1996-06-01), None
patent: 10-107317 (1996-09-01), None
patent: 10-284507 (1997-04-01), None
patent: 9-219561 (1997-08-01), None
patent: 9-312418 (1997-12-01), None
patent: 10178026 (1998-06-01), None
patent: 2000-101139 (2000-04-01), None
patent: 2000-106455 (2000-04-01), None
patent: 2000-156524 (2000-06-01), None
patent: 2000-357663 (2000-12-01), None
Zheleva et al., “Pendeo-Epitaxy—A New Approach for Lateral Growth of GaN Structures,”MRS Internet Journal of Nitride Semiconductor Research, Materials Research SocietyWarrendale, Pennsylvania, 4S1, G3.38 (1999).
Koto Masahiro
Okagawa Hiroaki
Ouchi Yoichiro
Tadatomo Kazuyuki
Erdem Fazli
Flynn Nathan J.
Leydig , Voit & Mayer, Ltd.
Mitsubishi Cable Industries Ltd.
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