Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Patent
1996-08-16
1999-08-10
Picardat, Kevin M.
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
438612, 2281805, H01L 2144
Patent
active
059349964
ABSTRACT:
A semiconductor assembling method joins a bonding wire with a bonding object by pressing the bonding wire against the bonding object with a bonding pressurizing tool and by effecting at least either one junction process of thermal junction or ultrasonic junction. The method includes steps of measuring a time elapsing from a last bonding process to a subsequent bonding process or a temperature of the pressurizing tool, and changing at least one junction condition of pressurizing force, pressurizing time, ultrasonic oscillation output, and ultrasonic oscillation time for the subsequent bonding process, based on the measured time. A semiconductor assembling apparatus including a measuring device for measuring the time or temperature and a junction condition changing device for changing the condition to perform the method.
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Eguchi Shinzou
Nagai Yoshiyuki
Matsushita Electric - Industrial Co., Ltd.
Picardat Kevin M.
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