Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Reexamination Certificate
2005-11-04
2009-02-10
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
C257S573000, C257SE21387
Reexamination Certificate
active
07488663
ABSTRACT:
A method for manufacturing a semiconductor article and a semiconductor article is provided, wherein a base region of a first semiconductor material is applied, a silicide layer is applied above the base region, after the application of the silicide layer, an opening is created in the silicide layer by removing the silicide layer within the area of the opening, and after this, an emitter region is formed within the opening.
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Atmel Germany GmbH
Coleman W. David
Muncy Geissler Olds & Lowe, PLLC
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