Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate
2005-09-13
2005-09-13
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
C257S019000, C257S192000, C257S347000
Reexamination Certificate
active
06943385
ABSTRACT:
A semiconductor apparatus includes a substrate, a buffer layer made of a monocrystal semiconductor material and formed on the substrate, a strained-Si layer formed on the buffer layer and having a lattice constant different from that of the buffer layer, a monocrystal insulating film formed on the strained-Si layer and made of a material having a rare earth structure with a lattice constant different from that of Si, and an electrode formed on the insulating film.
REFERENCES:
patent: 5847419 (1998-12-01), Imai et al.
patent: 6607948 (2003-08-01), Sugiyama et al.
patent: 6743680 (2004-06-01), Yu
patent: 2002/0088971 (2002-07-01), Tezuka et al.
patent: 2003/0137017 (2003-07-01), Hisamoto et al.
patent: 2003-234472 (2003-08-01), None
McKee et al. “Physical Structure and Inversion Charge at a Semiconductor Interface With a Crystalline Oxide”, Science, vol. 293, pp. 468-471, (2001).
Nishikawa et al., “Direct Growth of Single Crystalline CeO2High-K Gate Dielectrics”, Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials, pp. 174-175, (2001).
Gottschalk et al., “Epitaxial Pr2O3on Silicon as an Alternative Gate Oxide for Future CMOS Applications”, Joint Session Crystalline Oxides for Gate Dielectrics, Session N8.5/T6.5, pp. 350-351, (2002).
Tezuka et al., “Novel Fully-Depleted SiGe-On-Insulator pMOSFETs With High-Mobility SiGe Surface Channels”, IEDM Tech. Dig., 946, IEEE, (2001).
Welser et al.; “Strain Dependence of the Performance Enhancement in Strained-Sin-MOSFETs”; IEDM, pp., 373-376, IEEE, (1994).
Hirose et al.; “Fundamental Limit of Gate Oxide Thickness Scaling in Advanced MOSFETs”; Semicond. Sci. Technol. vol. 15, pp. 485-490, (2000).
Takagi Shin-ichi
Usuda Koji
Cao Phat X.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
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