Semiconductor apparatus with improved ESD withstanding voltage

Details Semiconductor apparatus with improved ESD withstanding voltage Semiconductor apparatus with improved ESD withstanding voltage

2007-06-12

2009-12-29

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S360000, C257SE29014

Reexamination Certificate

active

07638848

ABSTRACT:
A semiconductor apparatus having an outer ESD protective circuit corresponding to each external connection terminal, the outer ESD protective circuit being formed in a peripheral region around the external connection terminals. The outer ESD protective circuit discharges electrostatic voltage from the external connection terminal and avoids the damaging of an internal circuit of the semiconductor apparatus. Accordingly, the ESD withstanding voltage of the semiconductor apparatus is improved.

REFERENCES:
patent: 4994874 (1991-02-01), Shimizu et al.
patent: 4996626 (1991-02-01), Say
patent: 5449940 (1995-09-01), Hirata
patent: 5473182 (1995-12-01), Kumagai
patent: 5821804 (1998-10-01), Nikutta et al.
patent: 5909046 (1999-06-01), Tanizaki et al.
patent: 5932914 (1999-08-01), Horiguchi
patent: 6078068 (2000-06-01), Tamura
patent: 6455898 (2002-09-01), Liu et al.
patent: 6744100 (2004-06-01), Okazaki
patent: 6768619 (2004-07-01), Ker et al.
patent: 6946708 (2005-09-01), Okazaki
patent: 2004/0095697 (2004-05-01), Roohparvar
patent: 0 388 180 (1990-09-01), None
patent: 2 259 606 (1993-03-01), None
patent: 6-112422 (1994-04-01), None
patent: 8-37299 (1996-02-01), None
patent: 8-236637 (1996-09-01), None
patent: 8-288404 (1996-11-01), None
patent: 9-186296 (1997-07-01), None
patent: 11-121750 (1999-04-01), None
patent: 2000-164807 (2000-06-01), None
patent: 2001-44374 (2001-02-01), None

Affiliated with

Also associated with

Rating

Semiconductor apparatus with improved ESD withstanding voltage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor apparatus with improved ESD withstanding voltage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor apparatus with improved ESD withstanding voltage will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4148265