Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-10-25
2005-10-25
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000
Reexamination Certificate
active
06958520
ABSTRACT:
There is disclosed a semiconductor apparatus comprising a semiconductor substrate having a first region and a second region isolated from the first region, a first semiconductor device which is formed in the first region and which includes a first gate insulating film of a silicon oxide single film formed on the semiconductor substrate, and a first gate electrode formed on the first gate insulating film, and a second semiconductor device which is formed in the second region and which includes a second insulating film of a single layer made of an insulating material of a dielectric constant different from that of the silicon oxide film, and a second gate electrode formed on the second gate insulating film.
REFERENCES:
patent: 4342149 (1982-08-01), Jacobs et al.
patent: 6538278 (2003-03-01), Chau
patent: 6696735 (2004-02-01), Fukui
patent: 2003/0151098 (2003-08-01), Nishida et al.
patent: 2005/0006675 (2005-01-01), Tsunashima et al.
patent: 2002-164439 (2002-06-01), None
Foley & Lardner LLP
Kabushiki Kaisha Toshiba
Ngo Ngan V.
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