Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-04-29
2000-11-21
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257335, 257336, 257348, H01L 2701
Patent
active
061506974
ABSTRACT:
An island region surrounded by a trench is provided in an SOI substrate. The island region is further surrounded by a buffer region with a buffer region contact layer. In the island region, a source region is annularly provided around a drain region, and source and drain electrodes are respectively provided on the source and the drain regions. An annular auxiliary electrode is formed with the source electrode to extend over the trench. Accordingly, a voltage applied to the source electrode can be applied to the auxiliary electrode, so that electric field concentration between the buffer region and the source electrode is relaxed.
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Abe Ryuichirou
Asai Akiyoshi
Itou Hiroyasu
Onoda Kunihiro
Sakakibara Toshio
Denso Corporation
Hardy David
Ortiz Edgardo
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