Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Patent
1996-11-14
2000-09-12
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
257 66, 257 67, 257 69, 257412, 257413, 438488, H01L 2904, H01L 31036
Patent
active
061181404
ABSTRACT:
In forming an electrode on a silicon oxide film on a semiconductor substrate through a silicon oxide film, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers. The portion of the gate electrode is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and of crystallizing (recrystallizing) this amorphous material. Depositing of the amorphous layers is carried out a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and crystallizing the amorphous material are repeated, whereby a laminated structure of polycrystalline layers having a necessary film thickness is obtained. It is possible to prevent deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
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Miura Hideo
Nakajima Takashi
Ohta Hiroyuki
Okamoto Noriaki
Hitachi , Ltd.
Mintel William
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