Semiconductor apparatus having a divided column region

Details Semiconductor apparatus having a divided column region Semiconductor apparatus having a divided column region

2004-12-22

2008-03-18

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S328000, C257S329000, C257S331000

Reexamination Certificate

active

07345337

ABSTRACT:
A semiconductor apparatus comprises a gate electrode, a gate insulating layer, a drift region of a first conductivity type formed over a semiconductor substrate of the first conductivity type, a base region of a second conductivity type formed over the drift region, a source region of the first conductivity type formed on the base region and a column region formed in the drift region under the base region, the column region being divided into a plurality of divided portions in depth direction.

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patent: 6713813 (2004-03-01), Marchant
patent: 6768171 (2004-07-01), Disney
patent: 6812524 (2004-11-01), Ahlers et al.
patent: 2003/0155610 (2003-08-01), Schlogl et al.
patent: 2003/0201483 (2003-10-01), Sumida
patent: 2003/0213993 (2003-11-01), Spring et al.
patent: 1 359 624 (2003-11-01), None
patent: 2001-298189 (2001-10-01), None

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