Semiconductor apparatus formed by SAC (self-aligned contact) met

Details Semiconductor apparatus formed by SAC (self-aligned contact) met Semiconductor apparatus formed by SAC (self-aligned contact) met

1997-06-18

2000-06-20

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257303, 257306, 257758, H01L 27108

Patent

active

060780738

ABSTRACT:
A gate electrode having a first insulating film laminated in the upper portion thereof is formed on a gate insulating film formed on a semiconductor substrate. A side wall is formed on the side wall of the gate electrode, and an insulating film is formed to cover the gate electrode and the side wall. Ion implantation is performed through the insulating film so that a diffusion layer is formed on the semiconductor substrate. An interlayer dielectric film is formed, and then the interlayer dielectric film and the insulating film are selectively etched so that an opening portion for exposing the gate insulating film is formed in a self-align manner with the gate electrode. Then, the gate insulating film in the bottom portion of the opening portion is removed so that the surface of the semiconductor substrate is exposed. Then, a wiring layer connected to the exposed surface of the semiconductor substrate is formed.

REFERENCES:
patent: 4997790 (1991-03-01), Woo et al.
patent: 5183770 (1993-02-01), Ayukawa
patent: 5338700 (1994-08-01), Dennison et al.
patent: 5356834 (1994-10-01), Sugimoto et al.
patent: 5366590 (1994-11-01), Kadomura
patent: 5401681 (1995-03-01), Dennison
patent: 5545584 (1996-08-01), Wuu et al.
patent: 5591664 (1997-01-01), Wang et al.
patent: 5691561 (1997-11-01), Goto
patent: 5702972 (1997-12-01), Tsai et al.
patent: 5763312 (1998-06-01), Jeng et al.

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