Semiconductor apparatus fabrication method forming a resist...

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant

Reexamination Certificate

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C438S694000, C438S725000, C438S945000

Reexamination Certificate

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06905949

ABSTRACT:
A semiconductor apparatus fabrication method is capable of effectively suppressing edge roughness when an extremely fine resist pattern is formed. In the semiconductor apparatus fabrication method, the extremely fine resist pattern is covered with a film whose heat-resistance temperature is higher than the softening temperature of the resist pattern. In this state, the resist pattern is heated at a temperature higher than the softening temperature and lower than the heat-resistance temperature in order to cause reflow in the resist pattern.

REFERENCES:
patent: 6602794 (2003-08-01), Kye
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patent: 2001015479 (2001-01-01), None
patent: 2001-332484 (2001-11-01), None
Stanley Wolf Ph.D. and Richard N. Tauber Ph.D. in Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, 1986, pp. 365-368.

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