Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2005-06-14
2005-06-14
Chaudhuri, Olik (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C438S694000, C438S725000, C438S945000
Reexamination Certificate
active
06905949
ABSTRACT:
A semiconductor apparatus fabrication method is capable of effectively suppressing edge roughness when an extremely fine resist pattern is formed. In the semiconductor apparatus fabrication method, the extremely fine resist pattern is covered with a film whose heat-resistance temperature is higher than the softening temperature of the resist pattern. In this state, the resist pattern is heated at a temperature higher than the softening temperature and lower than the heat-resistance temperature in order to cause reflow in the resist pattern.
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Stanley Wolf Ph.D. and Richard N. Tauber Ph.D. in Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, 1986, pp. 365-368.
Brewster William M.
Chaudhuri Olik
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