Semiconductor apparatus and semiconductor package

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material

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257712, 257713, H01L 2348

Patent

active

052296431

ABSTRACT:
The heat transfer path (the heat radiating portion) from a position very near the semiconductor device as the heat source to the surface of the semiconductor apparatus is made of a material having a large heat conductivity thereby to more rapidly transfer the heat generated in the p-n junction to the surface of the semiconductor apparatus or the outside. This arrangement can cope with that the calorific power is increased as the integration is increased. The formation of the good heat conductive material from the surface of the apparatus to the heat source through the multilayer structure film can be attained by means of the CVD technique.

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patent: 5003429 (1991-03-01), Baker et al.
patent: 5027191 (1991-06-01), Bourdelaise et al.
patent: 5045503 (1991-09-01), Kobiki et al.
patent: 5053855 (1991-10-01), Michii et al.
patent: 5083188 (1992-01-01), Yamagata
patent: 5113315 (1992-05-01), Capp et al.

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