Semiconductor apparatus and method of producing same

Details Semiconductor apparatus and method of producing same Semiconductor apparatus and method of producing same

1998-02-20

2000-10-31

Dutton, Brian

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438657, H01L 2144

Patent

active

06140229&

ABSTRACT:
A semiconductor apparatus having at least a compound film containing nitrogen and a method for production of the same, wherein the compound film containing nitrogen is formed under conditions where the ratio of the flow rates of the nitrogen with respect to an inert gas is 0.125 to 1.0.

REFERENCES:
patent: 5340459 (1994-08-01), Takehara
patent: 5439574 (1995-08-01), Kobayashi et al.
patent: 5581125 (1996-12-01), Maeda

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