Semiconductor apparatus and method of manufacturing the same

Details Semiconductor apparatus and method of manufacturing the same Semiconductor apparatus and method of manufacturing the same

2011-01-04

2011-01-04

Wilson, Allan R (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S334000, C257SE29262

Reexamination Certificate

active

07863679

ABSTRACT:
A vertical power MOSFET includes a semiconductor substrate including a trench, a gate electrode layer having a prescribed impurity concentration and being formed inside the trench, and a cap insulating layer having a lower impurity concentration than the impurity concentration of the gate electrode layer and covering the gate electrode layer to provide insulation.

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