Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-04
2007-09-04
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000, C257S412000, C257S413000
Reexamination Certificate
active
10927115
ABSTRACT:
A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiO2film, a film containing SiO2as a main component and at least one of Hf and Zr, a film containing SiO2as a main component and N, a film containing SiO2as a main component, Hf and N, a film containing SiO2as a main component, Zr and N, or a film containing SiO2as a main component, Hf, Zr and N.
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Eguchi Kazuhiro
Inumiya Seiji
Kaneko Akio
Sato Motoyuki
Sekine Katsuyuki
Crane Sara
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Gebremariam Samuel A.
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