Semiconductor apparatus and method of fabricating the same

Details Semiconductor apparatus and method of fabricating the same Semiconductor apparatus and method of fabricating the same

2007-09-25

2007-09-25

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S621000

Reexamination Certificate

active

10950689

ABSTRACT:
A semiconductor apparatus is constructed such that the top surface, contacting a barrier metal film, of a conducting film embedded in a trench is located below the top surface of a second interlayer insulating film. The semiconductor apparatus is fabricated such that a plasma treatment is performed in a non-nitriding environment after a polishing process using CMP, so as to form a damaged layer on top of the second interlayer insulating film and the conducting film, and a portion of the damaged layer is removed by etching.

REFERENCES:
patent: 6972253 (2005-12-01), Liu et al.
patent: 7071515 (2006-07-01), Sheu et al.
patent: 2002-246391 (2002-08-01), None
“Dependence of TDDB Characteristic of Cu Interconnect in Wiring Structure”; pp. 2-42-2-245 (unknown year).
“Dependence of TDDB Characteristic of Cu Interconnect on Wiring Structure” (unknown year).

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