Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-08-18
2009-02-24
Thai, Luan C (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S066000, C257S072000
Reexamination Certificate
active
07495256
ABSTRACT:
It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.
REFERENCES:
patent: 5519936 (1996-05-01), Andros et al.
patent: 5561323 (1996-10-01), Andros et al.
patent: 5633533 (1997-05-01), Andros et al.
patent: 5757456 (1998-05-01), Yamazaki et al.
patent: 5773884 (1998-06-01), Andros et al.
patent: 5821138 (1998-10-01), Yamazaki et al.
patent: 5825625 (1998-10-01), Esterberg et al.
patent: 5834327 (1998-11-01), Yamazaki et al.
patent: 6228965 (2001-05-01), Muta et al.
patent: 6372608 (2002-04-01), Shimoda et al.
patent: 6376333 (2002-04-01), Yamazaki et al.
patent: 6689492 (2004-02-01), Yamazaki et al.
patent: 6781152 (2004-08-01), Yamazaki
patent: 6828727 (2004-12-01), Yamazaki
patent: 2003/0025118 (2003-02-01), Yamazaki et al.
patent: 2003/0032210 (2003-02-01), Takayama et al.
patent: 2003/0047280 (2003-03-01), Takayama et al.
patent: 2003/0064569 (2003-04-01), Takayama et al.
patent: 2003/0082889 (2003-05-01), Maruyama et al.
patent: 2003/0134488 (2003-07-01), Yamazaki et al.
patent: 2003/0217805 (2003-11-01), Takayama et al.
patent: 2004/0087110 (2004-05-01), Takayama et al.
patent: 2004/0169786 (2004-09-01), Yamazaki et al.
patent: 2004/0238827 (2004-12-01), Takayama et al.
patent: 2005/0093436 (2005-05-01), Yamazaki
patent: 2005/0164470 (2005-07-01), Yamazaki et al.
patent: 1180856 (1998-05-01), None
patent: 1 215 920 (1999-05-01), None
patent: 1 245 521 (2000-02-01), None
patent: 1 353 464 (2002-06-01), None
patent: 0 836 227 (1998-04-01), None
patent: 0 942 059 (1999-09-01), None
patent: 2001-331120 (2001-11-01), None
patent: 2003-204049 (2003-07-01), None
International Search Report (Application No. PCT/JP03/13068) dated Jan. 27, 2004; 4 pages.
People's Republic of China Office Action (Application No. 200380101620.4), dated Dec. 22, 2006, 20 pages including full English translation.
Office Action (Chinese Application No. 200380101620.4) mailed Sep. 7, 2007; 22 pages with full English language translation.
“Thermally conductive thermoplastics”, News about Materials & Application, 2001, vol. 19, No. 3, pp. 27-28. (Full Translation).
Office Action (Application No. 200380101620.4;PCTCN6669) dated Mar. 7, 2008.
Maruyama Junya
Ohno Yumiko
Takayama Toru
Yamazaki Shunpei
Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Thai Luan C
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