Semiconductor apparatus

Details Semiconductor apparatus Semiconductor apparatus

2008-05-19

2009-11-24

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S268000

Reexamination Certificate

active

07622771

ABSTRACT:
A semiconductor apparatus includes a first semiconductor layer, a second semiconductor layer provided on a major surface of the first semiconductor layer, a third semiconductor layer provided on the major surface and being adjacent to the second semiconductor layer, a termination semiconductor layer provided on the major surface of the first semiconductor layer in a termination region outside the device region, a channel stop layer, and a channel stop electrode. The channel stop layer is provided in contact with the termination semiconductor layer on the major surface of the first semiconductor layer in an outermost peripheral portion outside the termination semiconductor layer and has a higher impurity concentration than the termination semiconductor layer. The channel stop electrode is provided on at least part of a surface of the channel stop layer and projects toward the termination semiconductor layer beyond at least a superficial portion of the channel stop layer.

REFERENCES:
patent: 6674126 (2004-01-01), Iwamoto et al.
patent: 6844592 (2005-01-01), Yamaguchi et al.
patent: 7161209 (2007-01-01), Saito et al.
patent: 2006/0043480 (2006-03-01), Tsuchitani et al.
patent: 2007/0272977 (2007-11-01), Saito et al.
patent: 2007/0272979 (2007-11-01), Saito et al.
patent: 2000-277726 (2000-10-01), None
patent: 2005-101560 (2005-04-01), None
U.S. Appl. No. 12/144,985, filed Jun. 24, 2008, Takashita et al.

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