Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2005-08-23
2005-08-23
Ho, Hoai (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S072000, C365S149000, C365S189070, C365S189090, C365S189110, C365S196000
Reexamination Certificate
active
06934212
ABSTRACT:
A simply structured, and highly reliable semiconductor apparatus having a large storage capacity. The apparatus has a plurality of memory cells on one semiconductor substrate, each including a capacitor having first and second electrodes, and a switching device having a control terminal connected to a corresponding word line among a plurality of word lines, and a current channel connected between the first electrode and a corresponding bit line among a plurality of bit lines. When the semiconductor apparatus is in a first mode, an OFF potential of the word lines is set to be a first potential, when the semiconductor apparatus is in a second mode, an OFF potential of the word lines is set to be a second potential, and a current channel of the switching device is set in a direction vertical to the semiconductor substrate.
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Antonelli Terry Stout & Kraus LLP
Hitachi , Ltd.
Ho Hoai
Pham Ly Duy
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