Semiconductor apparatus

Details Semiconductor apparatus Semiconductor apparatus

2011-08-23

2011-08-23

Zarneke, David A (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

C257S660000, C257S536000, C257S173000, C257S355000, C257S360000, C257SE23114, C257SE23002

Reexamination Certificate

active

08004067

ABSTRACT:
A semiconductor apparatus includes: a substrate of single crystal silicon; a first device formed in a first region of a surface of the substrate; a first interlayer insulating film formed on the substrate; a polycrystalline silicon layer formed in a second region on the first interlayer insulating film; a second device formed in the polycrystalline silicon layer; a second interlayer insulating film formed on the first interlayer insulating film, the second interlayer insulating film covering the polycrystalline silicon layer; and a pad formed in a third region on the second interlayer insulating film. The second region includes at least part of a directly overlying zone of the first region. The third region includes at least part of a region which is the directly overlying zone of the first region and a directly overlying zone of the second region.

REFERENCES:
patent: 5139959 (1992-08-01), Craft et al.
patent: 5204988 (1993-04-01), Sakurai
patent: 5589415 (1996-12-01), Blanchard
patent: 5670819 (1997-09-01), Yamaguchi
patent: 2004/0245574 (2004-12-01), Ker et al.
patent: 2000-299457 (2000-10-01), None

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