Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-26
2011-04-26
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S358000, C257SE29222
Reexamination Certificate
active
07932561
ABSTRACT:
A semiconductor apparatus is equipped with an internal circuit (201) including a semiconductor element (202)(203) and a protection circuit (101) including a semiconductor (102)(103) for protecting the internal circuit (201) against damage from electrostatic discharge (ESD). The semiconductor elements (102)(103) (202)(203) constituting the internal circuit (201) and the protection circuit (101) include an impurity diffusion region (7)(8) connected by an external terminal and a guard band region (6)(5) formed near the impurity diffusion region (7)(8), respectively. A shortest distance (102L)(103L) between the impurity diffusion region (7)(8) and the guard band region (6)(5) in the semiconductor element (102)(103) of the protection circuit (101) is set to be shorter than a shortest distance (202L)(203L) between the impurity diffusion region (7)(8) and the guard band region (6)(5) in the semiconductor element (202)(203) of the internal circuit (201).
REFERENCES:
patent: 6469354 (2002-10-01), Hirata
patent: 2004/0155294 (2004-08-01), Hung et al.
patent: 05-75118 (1993-03-01), None
Jackson, Jr. Jerome
Page Dale
Sanyo Electric Co,. Ltd.
Westerman Hattori Daniels & Adrian LLP
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