Semiconductor and process of fabrication thereof

Details Semiconductor and process of fabrication thereof Semiconductor and process of fabrication thereof

1988-12-13

1989-08-08

Macon, Robert S.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

357 34, 357 59, 156628, 148175, 29576E, 29578, 29591, H01L 2348, H01L 2944, H01L 2954, H01L 2962

Patent

active

048557986

ABSTRACT:
A semiconductor device having a salicide (self-aligned silicide) configuration and operable as, for example, a dynamic RAM device is fabricated by preparing a semiconductor substrate, forming a layer of silicon in, on or over the semiconductor substrate, forming a layer of a metal on the layer of silicon, the metal silicide layer having a surface portion, and heating the resultant structure in the presence of a reaction ambient containing nitride for forming on the layer of silicon a layer of a metal silicide having a surface portion and nitriding the surface portion to form a nitride layer consisting of a nitride of said metal silicide.

REFERENCES:
patent: 4408387 (1983-10-01), Kiriseko
patent: 4545116 (1985-10-01), Lau
patent: 4551911 (1985-11-01), Sasaki et al.

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