Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-16
2006-05-16
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S663000, C438S535000
Reexamination Certificate
active
07045458
ABSTRACT:
A semiconductor comprises a substrate including a single crystal semiconductor region, and a pattern including a line pattern provided on the substrate, the line pattern having a longitudinal direction differing from a crystal orientation of the single crystal semiconductor region.
REFERENCES:
patent: 6528397 (2003-03-01), Taketomi et al.
patent: 6806498 (2004-10-01), Taketomi et al.
patent: 11-87729 (1999-03-01), None
patent: 2002-198322 (2002-07-01), None
Ito Takayuki
Suguro Kyoichi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Nhu David
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