Semiconductor alignment aid

Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure

Reexamination Certificate

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Details

C257S283000, C257S797000, C257S798000, C257SE23190, C438S710000, C438S238000, C438S239000, C438S240000, C438S241000

Reexamination Certificate

active

06933523

ABSTRACT:
An alignment aid for semiconductor devices. The alignment aid includes an area having a high level of reflectivity and an adjacent area having a of low level of reflectivity. The area having a low level of reflectivity includes at least one layer of tiles located in an interconnect layer of a semiconductor device and located over active circuitry of the semiconductor device. In some examples, the spacings between the tiles in a scan direction of the alignment aid is less than the wavelength of a light (e.g. a laser light) used to scan the alignment aid. In other examples, the width of the tiles in a scan direction of the alignment aid is less than the wave length of a laser used to scan the alignment aid.

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